PART |
Description |
Maker |
DTB723YM DTB723YE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
DTD713ZM DTD713ZE |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
2SC5585 |
Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA
|
TY Semiconductor Co., Ltd
|
NSS30100LT1G |
30V, 2A, Low VCE(sat) PNP Transistor(30V,2A,低VCE(sat),PNP型晶体管) 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 30 V, 2 A, Low Vce(sat) PNP Transistor
|
ONSEMI[ON Semiconductor]
|
NSS30201MR6T1G |
30V, 3A, Low VCE(sat) NPN Transistor(30V, 3A, 低VCE(sat) NPN晶体 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR 30 V, 3 A, Low VCE(sat) NPN Transistor
|
ONSEMI[ON Semiconductor]
|
NSS30070MR6T1G |
30 V, 0.7 A, Low VCE(sat) PNP Transistor(30V, 0.7A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
2SB1386 |
Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain
|
TY Semiconductor Co., Ltd
|
2SB1424 |
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
|
TY Semiconductor Co., Ltd
|
EN8949 |
Bipolar Transistor, (-)30V, (-)3A, Low VCE(sat) Complementary Dual MCPH6
|
ON Semiconductor
|
IXGH28N60B |
Ultra Low VCE(sat) IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.0V???缂??????朵?绠?甯?????锛?
|
IXYS CORP
|
NSS40600CF8T1G_07 NSS40600CF8T1G NSS40600CF8T1G07 |
40 V, 7.0 A, Low VCE(sat) PNP Transistor(40V, 7.0A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
|